Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
tfr
Diode Froward Recvery Time
(di/dt=10A/μs)
VCE(DSAT) Dynamic Saturation Voltage
IF=0.2A
IF=0.4A
IF=1A
IC=0.4A, IB1=40mA
VCC=300V
@ 1μs
@ 3μs
IC=1A, IB1=200mA
VCC=300
@ 1μs
@ 3μs
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20μs)
tON
Turn On Time
tOFF
Turn Off Time
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=1A,
IB1=200mA,
IB2=150mA,
VCC=300V,
RL = 300Ω
IC=0.4A,
IB1=40mA,
IB2=200mA,
Vz=300V,
LC=200H
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=0.8A,
IB1=160mA,
IB2=160mA,
Vz=300V,
LC=200H
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=1A,
IB1=200mA,
IB2=500mA,
VZ=300V,
LC=200μH
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
Min.
0.95
Typ.
540
520
480
7.5
2.5
11.5
1.5
110
135
1.4
0.56
0.7
60
75
90
90
3
110
180
125
185
1.1
1.35
105
75
125
100
Max.
Units
ns
ns
ns
V
V
V
V
150 ns
ns
1.25 μs
μs
0.65 μs
μs
175 ns
ns
175 ns
ns
2.75 μs
μs
175 ns
ns
350 ns
ns
1.2 μs
μs
150 ns
ns
150 ns
ns
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
3
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