MPSW63 Ver la hoja de datos (PDF) - Motorola => Freescale
Número de pieza
componentes Descripción
Fabricante
MPSW63 Datasheet PDF : 4 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSW63/D
MPSW63
MPSW64 *
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
MPSW63
Symbol
MPSW64
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
–30
–30
–10
–500
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
Symbol
V(BR)CES
ICBO
IEBO
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min
Max
Unit
–30
—
Vdc
—
–100
nAdc
—
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
Share Link: 