2SA1797 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

2SA1797

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1797

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0

-50

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1.0mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-50μA,IC=0

-6

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=-50V,IB=0

IEBO

VEB=-5V,IC=0

-0.1 μA

-0.1 μA

DC current gain

82

180

hFE

VCE=-2V,IC=-500mA

120

270

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

IC=-1A, IB=-50mA

VCE=-2V, IE=-500mA

f=100MHz

VCB=-10V,IE=0,f=1MHz

-0.15 -0.35 V

200

MHz

36

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

AGP

Q

120-270

AGQ

E027

Rev.A

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