PBSS5350X Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS5350X Datasheet PDF : 13 Pages
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NXP Semiconductors
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
PBSS5350X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
note 1
225
K/W
note 2
125
K/W
note 3
note 4
90
K/W
80
K/W
Rth(j-s)
thermal resistance from junction to soldering point
16
K/W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
10
006aaa243
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
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