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FDC6329L Datasheet PDF : 4 Pages
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FDC6329L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.5A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6
package.
Features
VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V
@ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>6KV Human Body Model).
High performance trench technology for extremely low
on-resistance.
SuperSOTTM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
.329
pin 1
SuperSOT TM-6
4 V IN , R1
5 VON/OFF
6 R1 , C1
Q2
Q1
3 VOUT , C1
IN
2 VOUT , C1
1 R2
EQUIVALENT CIRCUIT
+VDROP -
O N / O FF
See Application Circuit
OUT
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VIN
VON/OFF
IL
Input Voltage Range
On/Off Voltage Range
Load Current
(Note 1)
- Continuous (Note 2)
- Pulsed
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJC
Thermal Resistance, Junction-to-Case (Note 2)
©1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
FDC6329L
2.5 - 8
1.5 - 8
2.5
10
0.7
-55 to 150
6
180
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
Publication Order Number:
FDC6329L/D
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