BF998 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 998

Gate 1 forward transconductance

gfs1 = f (ID)

VDS = 8 V, IDSS = 10 mA, f = 1 kHz

Gate 1 input capacitance Cg1ss = f (VG1S)

VG2S = 4 V, VDS = 8 V, IDSS = 10 mA,

f = 1 MHz

Gate 2 input capacitance Cg2ss = f (VG2S)

VG1S = 0 V, VDS = 8 V

IDSS = 10 mA, f = 1 MHz

Output capacitance Cdss = f (VDS)

VG1S = 0 V, VG2S = 4 V

IDSS = 10 mA, f = 1 MHz

Semiconductor Group

5

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