2N5619 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N5619

Silicon PNP Power Transistors

New Jersey Semiconductor 

redacts., Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistors

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2N5619

DESCRIPTION

• DC Current Gain-

: hFE= 30-90@lc= -2.5A

• Wide Area of Safe Operation

• Collector-Emitter Sustaining Voltage-

: VCEo(sus)=-100V(Min)

• Complement to Type 2N5620

APPLICATIONS

• Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

PIN 1.BASE

2. EMITTER

3. COLLECTOR (CASE)

TO-3 package

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-5.5

V

Ic

Collector Current-Continuous

-5

A

PC

Collector Power Dissipation@Tc=25°C

50

W

Tj

Junction Temperature

150

r

Tstg

Storage Temperature

-65-150 •c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

3.0

UNIT

•c/w

DIM

A

E

_£_

0

E

(J

H

K

L

N

Q

U

V

nun

MM MAX

3900

25.30 2$ .67

7.80 8.30

0.90

1 10

1.40

1.60

1092

546

1t.4Q 13.50

1675 1705

19.40 1962

4.00 4.20

3000 3020

430 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliableat the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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