2SC3512 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC3512 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3512
DESCRIPTION
·Low Noise and High Gain
NF = 1.6 dB TYP. @f = 900 MHz
PG = 10.5 dB TYP. @f = 900 MHz
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
11
V
VEBO Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
0.6
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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