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ZVN4525GTC Datasheet PDF : 7 Pages
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ZVN4525G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
On-State Drain Current (Note 8)
Static Drain-Source On-State Resistance (Note 8)
Forward Transconductance (Note 10)
Symbol Min
BVDSS
250
IDSS
—
IGSS
—
VGS(th)
0.8
ID(on)
3
—
RDS (ON)
—
—
gfs
0.3
Typ
285
35
±1
1.4
—
5.6
5.9
6.4
0.475
Diode Forward Voltage (Note 8)
VSD
—
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
—
Coss
—
Crss
—
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Fall Time (Note 9)
Reverse Recovery Time
Reverse Recovery Charge
Qg
—
Qgs
—
Qgd
—
td(on)
—
tr
—
td(off)
—
tf
—
trr
—
Qrr
—
Notes:
8. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
72
11
3.6
2.6
0.2
0.5
1.25
1.7
11.4
3.5
186
34
Max
—
500
±100
1.8
—
8.5
9
9.5
—
0.97
—
—
—
3.65
0.28
0.70
—
—
—
—
260
48
Unit
Test Condition
V ID = 1mA, VGS = 0V
nA VDS = 250V, VGS = 0V
nA VGS = ±40V, VDS = 0V
V
ID = 1mA, VDS = VGS
A
VDS = 25V, VGS = 10V
VGS = 10V, ID = 500mA
Ω VGS = 4.5V, ID = 360mA
VGS = 2.5V, ID = 20mA
S VDS = 10V, ID = 0.3A
V
IS = 360mA, VGS = 0V,
TJ = +25°C
pF
pF
VDS = 25 V, VGS = 0V
f = 1MHz
pF
VDS = 25V, VGS = 10V,
nC ID = 360mA (refer to
test circuit)
VDD = 30V, ID = 360mA,
ns RG = 50Ω, VGS = 10V (refer to
test circuit)
ns IF = 360mA, di/dt = 100A/µs,
nC TJ = +25°C
ZVN4525G
Datasheet Number: DS33383 Rev. 2 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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