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BBY35F Ver la hoja de datos (PDF) - Siemens AG

Número de pieza
componentes Descripción
Fabricante
BBY35F
Siemens
Siemens AG 
BBY35F Datasheet PDF : 2 Pages
1 2
BBY 35 F
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Reverse current
VR = 20 V
Diode capacitance
VR1 = 4 V, f = 1 MHz
VR2 = 20 V, f = 1 MHz
Capacitance ratio
VR1 = 4 V, VR2 = 20 V
Figure of merit
VR = 4 V, f = 50 MHz
Symbol
min.
V(BR)
22
Values
typ. max.
Unit
V
IR
10 nA
CT
pF
8.5 –
10
2.1 –
2.4
CT4
3.5 –
CT20
Q
250 350 –
Semiconductor Group
2

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