BUK98150-55A(2007) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BUK98150-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK98150-55A
N-channel TrenchMOS logic level FET
120
Pder
(%)
80
03aa17
6
ID
(A)
4
003aab629
40
2
0
0
50
100
150
200
Tsp (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of solder point temperature
0
25
50
VGS ≥ 5 V
75
100
125
150
Tsp (°C)
Fig 2. Continuous drain current as a function of
solder point temperature
102
ID
(A)
10
Limit RDSon = VDS / ID
003aab630
tp = 10 µ s
100 µs
1
10-1
1
DC
10
VDS (V)
1 ms
10 ms
100 ms
102
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK98150-55A_4
Product data sheet
Rev. 04 — 11 June 2007
© NXP B.V. 2007. All rights reserved.
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