2SB1016 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

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Fabricante

2SB1016

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1016

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

VBE

Base-emitter voltage

IC=-4A; VCE=-5V

ICBO

IEBO

hFE-1

Collector cut-off current

Emitter cut-off current

DC current gain

VCB=-100V; IE=0

VEB=-5V; IC=0

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-1A; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V;IE=0

‹ hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

MIN TYP. MAX UNIT

-100

V

-2.0

V

-1.5

V

-100 μA

-1

mA

40

240

20

5

MHz

270

pF

2

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