Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE Linearity.
Power dissipation:PD=250mW.
High hFE.
Pb
Lead-free
2SA733
APPLICATIONS
Designed for use in driver stage of amplifier.
ORDERING INFORMATION
Type No.
Marking
2SA733
CS
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-60
-50
-5
-100
250
-55 to +150
Units
V
V
V
mA
mW
℃
C009
Rev.A
www.gmesemi.com
1