SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1250
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=-5A; IB=-0.5A
VCB=200V; IE=0
VEB=-7V; IC=0
IC=-2A ; VCE=-1V
hFE-2
DC current gain
IC=-5A ; VCE=-1V
MIN TYP. MAX UNIT
-200
V
-7
V
-1.5
V
-2.0
V
-10
µA
-10
µA
40
200
20
2