2SA1493 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA1493

Silicon PNP Power Transistor

New Jersey Semiconductor 

J.ZIIE.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

^Pioaucti, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1493

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

V(BR)CEo= -200V(Min)

• Good Linearity of hFE

• Complement to Type 2SC3857

APPLICATIONS

• For audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V,

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ Tc=25"C

Tj

Junction Temperature

-5

A

150

W

150

°c

Tstg

Storage Temperature Range

-55-150 'C

1 23

PIN 1.BASE

2.COLLECTOR

3. EMITTER

MT-200 package

mm

DIM WIN

A 21.00

B 35-80

C 5-60

D 1.04

F 3-10

G 1.90

H 3.60

J 0-55

K 20.00

L 2.90

N 10.50

Q 24.00

R 2.90

S 2.00

U 6.90

¥ 8.90

MAX

21.70

36-70

6-20

1.07

3.50

2.40

4.00

Q.B5

20.80

3-40

lt.10

24.50

3.30

2.20

7.10

9.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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