2SB1101 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1101 Datasheet PDF : 2 Pages
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f^£m.L-Condactoi Lpi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1101
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -60V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)
• Complement to Type 2SD1601
APPLICATIONS
• Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
-7
V
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-8
A
40
W
150
•c
-55-150
r
•
1.
i^
123
JT2
T
"TT —/Af ^^
PIH: 1 Base
2 Collector
3 Emitter
TO-220C package
- BH
1
!/7^[
A
—|
,-}
I*
K
ItrrHl« D
~*| (
* P* J
4
C1
i
J
A
mm
DIM WIN MAX
A 15.50 15.90
B 9.90 10 .20
C 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
H 2.68 2.90
J 0.44 0.60
K 13.00 13.40
L 1.10 1.45
Q 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and packiige dimensions uithoiH
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of'point;
to press. I limeser. N.I Semi-CondiiL'tors assumes no responsibility tor any errors or omission* discovered in its use.
N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.
Quality Semi-Conductors
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