Elektronische Bauelemente
2SB1197K
- 32V, - 0.8A
Low Frequency Transistor
ƔELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
- 40
- 32
-5
-
-
-
120
50
-
Typ.
-
-
-
-
-
-
-
200
12
Max.
-
-
-
- 0.5
- 0.5
- 0.5
390
-
30
UNIT
V
V
V
µA
µA
V
-
MHz
pF
TEST CONDITIONS
IC = í50µA
IC = í1mA
IE = í50µA
VCB = í20V
VEB = í4V
IC / IB = í0.5A / í50mA
VCE = í3V, IC = í100mA
VCE = í5V, IE = 50mA,
f = 100MHz
VCB = í10V, IE = 0A,
f = 1MHz
ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
hFE
Marking
Q
120 ~ 270
AHQ
R
180 ~ 390
AHR
ƔELECTRICAL CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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