2SB825 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

2SB825

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERNAVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

2SB825

DESCRIPTION

• High Collector Current:: lc= -7A

• Low Collector Saturation Voltage

: VcEfsatr -0.4V(Max)@lc= -4A

• Wide Area of Safe Operation

• Complement to Type 2SD1061

APPLICATIONS

• Universal high current switching as solenoid driving, high

speed inverter and converter.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-50

V

VEBO Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-7

A

ICM

Collector Current-Peak

Total Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-12

A

40

W

150

'C

-55-150 °c

,»•»

2

'• 1

;'

" "'

FIH: 1 Base

Z Collector

3 Emitter

TO-220C package

-« v >n.'-i •*i B M

r

-* *S

Mo1.)^efy

A '-;•

IL

IT H4 •

K

P T

1

H

•J

c

,

mm

DIN WIN MAX

A 15,50 15.90

B 9.90 10.20

C 4.20 4,50

D 0.70 0.90

F 3.40 3,70

G 4.98 5.18

H Z. 68 2.90

J 0.44 0.60

K 13.00 13.40

L 1.10 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1.35

u 6.45 6.65

V 8.66 8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout

notice. Information Furnished by N.I Seini-C'ondiiclors is believed to be both accurate and reliable at Hie time of going

lo press, llouever. N.I Semi-Conductors assumes no responsibility For any errors or omissions discovered in its use.

VI Semi-Conductors enauirii«es customers to \erily that datasheets are current before placing orders.

Quality 5emi-Conductors

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