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2SC2921 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SC2921
Iscsemi
Inchange Semiconductor 
2SC2921 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IE=-2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=-IB2=0.5A
VCC=60V
‹ hFE classifications
O
P
Y
50-100
70-140
90-180
Product Specification
2SC2921
MIN TYP. MAX UNIT
160
V
2.0
V
100 μA
100 μA
50
200
pF
60
MHz
0.20
μs
1.50
μs
0.35
μs
2

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