2SB435 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB435

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB435

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -50V(Min)

·Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.) @IC= -1A

·Complement to Type 2SD235

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

VCEO

VEBO

IC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

-40

V

-40

V

-5

V

-3

A

IB

Base Current-Continuous

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@Tc=25℃

TJ

Junction Temperature

-0.3

A

1.5

W

25

150

℃

Tstg

Storage Temperature

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

Share Link: