2SB435 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SB435

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB435

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A

VBE(on) Base-Emitter On Voltage

IC= -0.5A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE1

DC Current Gain

IC= -0.5A; VCE= -5V

hFE2

DC Current Gain

IC= -2.5A; VCE= -5V

COB

Output Capacitance

IE=0; VCB= -10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product

IC=-0.5A ; VCE= -5V

MIN TYP. MAX UNIT

-40

V

-5

V

-1.0

V

-0.9

V

-10

μA

-10

μA

40

240

15

150

pF

10

MHz

 hFE-1 Classifications

R

O

Y

40-80

70-140 120-240

isc website：www.iscsemi.com

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