2N5933 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N5933 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
2N5933
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc=20A; IB=1.3A
VeE(on) Base-Emitter On Voltage
lc= 10A; VCE=4V
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
ICBO
Collector Cutoff Current
VCB=110V;IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 20A ; VCE= 4V
hpE-2
DC Current Gain
lc= 30A ; VCE= 4V
fr
Current-Gain—Bandwidth Product lc=1A;VcE=10V;f,est=1MHz
MIN TYP. MAX UNIT
100
V
2.0
V
1.5
V
2.0
mA
1.0
mA
1.0
mA
20
100
4
30
MHz
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