2N5320 Ver la hoja de datos (PDF) - Comset Semiconductors
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2N5320 Datasheet PDF : 3 Pages
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NPN 2N5320 – 2N5321
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and commercial
equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
TJ
TStg
Ratings
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation
@ Tamb = 25°
@ Tcase= 25°
Junction Temperature
Storage Temperature range
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
Value
75
50
100
75
100
75
6
5
2
1
1
10
Unit
V
V
V
V
A
A
Watts
-65 to +200 °C
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
2N5320
2N5321
2N5320
2N5321
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
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