2N5320 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N5320 Datasheet PDF : 3 Pages
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NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
IEBO
VCEO
VCEV
VEBO
hFE (1)
VCE(SAT) (1)
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown
Voltage
DC Current Gain
Collector-Emitter saturation
Voltage
VCB = 80 V, IE =0
VCB = 60 V, IE =0
VEB = 5 V, IC =0
VEB = 4 V, IC =0
IC = 10 mA, IB =0
IC = 100 µA
VBE = 1.5V
IE = 100 µA, IC =0
IC = 500 mA
VCE = 4 V
IC = 1 A
VCE = 2 V
IC = 500 mA, IB = 50 mA
VBE (1)
Base-Emitter Voltage
IC = 500 mA, VCE = 4 V
fT
Transition frequency
ton
Turn-on Time
toff
Turn-off Time
(1) Pulse conditions : tp < 300 µs, δ =1%
IC = 50 mA, VCE = 4 V
f = 10 MHz
IC = 500 mA, VCC = 30 V
IB1 = 50 mA
IC = 500 mA, VCC = 30 V
IB1 = -IB2 = 50 mA
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
Min Typ Mx Unit
-
-
-
-
0.5
5
µA
- 0.1 -
- 0.5 -
µA
75 -
50 -
-
-
V
100 -
75 -
-
-
V
6-
5-
-
-
V
30 - 130
40 - 250 -
10 - -
-
-
- 0.5
- 0.8
V
-
-
- 1.1
- 1.4
V
50 - - MHz
- - 80 ns
- - 800 ns
COMSET SEMICONDUCTORS
2/3
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