DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FS30SM-3 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

Número de pieza
componentes Descripción
Fabricante
FS30SM-3 Datasheet PDF : 4 Pages
1 2 3 4
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5
TC = 25°C
Pulse Test
4
ID = 50A
3
2
30A
1
10A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
104
7
5
3
Ciss
2
103
7
5
3
2
Coss
102
7
5
Tch = 25°C
f = 1MHZ
3 VGS = 0V
2
3
5 7100
23
5 7 101
Crss
2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS30SM-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
VGS = 10V
20V
60
40
20
0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
VDS = 10V
Pulse Test
5
4
3
2
TC = 25°C
75°C
101
125°C
7
5
4
3
2
100
100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 80V
5
4
VGS = 10V
RGEN = RGS = 50
3
2
td(off)
102
7
tf
5
4
tr
3
td(on)
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]