HIP6301EVAL1 Ver la hoja de datos (PDF) - Renesas Electronics

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HIP6301EVAL1

Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller

Renesas Electronics 

HIP6311

dissipated by the Driver IC and don't heat the MOSFETs.

However, large gate-charge increases the switching time,

tSW which increases the upper MOSFET switching losses.

Ensure that both MOSFETs are within their maximum

junction temperature at high ambient temperature by

calculating the temperature rise according to package

thermal-resistance specifications. A separate heatsink may

be necessary depending upon MOSFET power, package

type, ambient temperature and air flow.

PUPPER = I--O-----2---------r--D----S----V--O--I--N-N------------V----O-----U----T-- + I--O-----------V----I--N---------2-t--S----W-----------F----S----W---

PLOWER = I--O-----2---------r--D----S------O-----N---V----I--N------V----I--N-----–----V-----O----U----T----

A diode, anode to ground, may be placed across Q2 and Q4.

These diodes function as a clamp that catches the negative

inductor swing during the dead time between the turn off of

the lower MOSFETs and the turn on of the upper MOSFETs.

The diodes must be a Schottky type to prevent the lossy

parasitic MOSFET body diode from conducting. It is usually

acceptable to omit the diodes and let the body diodes of the

lower MOSFETs clamp the negative inductor swing, but

efficiency could drop one or two percent as a result. The

diode's rated reverse breakdown voltage must be greater

than the maximum input voltage.

FN4817 Rev 3.00

December 27, 2004

Page 16 of 17

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