KSB906 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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KSB906 Datasheet PDF : 4 Pages
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KSB906
Low Frequency Power Amplifier
• Low Collector- Emitter Saturation Voltage
• Complement to KSD1221
1
I-PAK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 60
- 60
-7
-3
- 0.5
20
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
IC = - 50mA, IB = 0
VCB = - 60V, IE = 0
VEB = - 7V, IC = 0
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 3A
IC = - 3A, IB = - 0.3A
VCE = - 5V, IC = - 0.1A
VCE = - 5V, IC = - 0.5A
VCB = - 10V, f = 1MHz
VCC = -30V, IC = - 1A
IB1 = - IB2 = - 0.2A
RL = 30Ω
Min. Typ. Max. Units
- 60
V
- 100 µA
- 100 µA
60
200
20
- 1 - 1.7
V
- 1 - 1.5
V
9
MHz
150
pF
0.4
µs
1.7
µs
0.5
µs
hFE Classification
Classification
hFE
O
60 ~ 120
Y
100 ~ 200
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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