HSU227 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HSU227

Silicon Schottky Barrier Diode for High Speed Switching

Renesas Electronics 

HSU227

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Average rectified current

Non-Repetitive peak forward surge current

Junction temperature

Storage temperature

Note: 1. 10 ms sine wave 1 pulse.

Symbol

VRRM

IO

IFSM *1

Tj

Tstg

Value

25

50

200

125

−55 to +125

(Ta = 25°C)

Unit

V

mA

mA

°C

°C

Electrical Characteristics

Item

Forward voltage

Reverse current

Capacitance

Symbol Min

VF

—

IR

—

C

—

Typ

0.29

0.3

2.45

(Ta = 25°C)

Max

Unit

Test Condition

0.35

2.0

3.00

V

IF = 1 mA

µA VR = 20 V

pF VR = 1 V, f = 1 MHz

Rev.2.00 Apr 28, 2005 page 2 of 4

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