HVC136 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HVC136

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Renesas Electronics 

HVC136

Absolute Maximum Ratings

(Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

Symbol

V

RM

V

R

IF

Pd

Tj

Tstg

Value

Unit

65

V

60

V

100

mA

150

mW

125

°C

-55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max

Reverse current

IR

Forward voltage

VF

Capacitance

C

— — 0.1

— — 0.9

— — 0.45

Forward resistance rf

ESD-Capability*1

—

— — 2.5

100 — —

Note : 1. Failure criterion ; IR > 100nA at VR =60 V

Unit

µA

V

pF

Ω

V

Test Condition

VR = 60V

IF = 2 mA

VR = 1V, f = 1 MHz

IF = 2mA, f = 100 MHz

C = 200pF , Both forward and reverse

direction 1 pulse.

Rev.2, Feb. 2000, page 2 of 2

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