KTA1666 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

KTA1666

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

KTA1666

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Base – Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

*PC

Tj

Tstg

*KTA1666 mounted on ceramic substrate(250mm2×0.8t)

DATA SHEET

数值

Rating

-50

-50

-5.0

-2.0

-0.4

500

1.0

150

-55～150

单位

Unit

V

V

V

A

A

mW

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Emitter Base Cut-Off Current

Collector to Emitter Breakdown

Voltage

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-On Time

Storage Time

Fall Time

符号

Symbol

测试条件

Test Conditions

ICBO VCB=-50V IE=0

IEBO VEB=-5.0V IC=0

VCEO IC=-10mA IB=0

hFE(1)

hFE(2)

VCE=-2.0V

VCE=-2.0V

IC=-0.5A

IC=-1.5A

VCE(sat) IC=-1.0A

IB=-0.05A

VBE(sat)

fT

Cob

ton

tstg

tf

IC=-1.0A

VCE=-2.0V

VCB=-10V

f=1MHz

IB=-0.05A

IC=-0.5A

IE=0

-IB1=IB2=0.05A

最小值 典型值 最大值 单位

Min Typ Max Unit

-0.1 μA

-0.1 μA

-50

V

70

240

40

-0.5 V

-1.2 V

120

MHz

40

pF

0.1

μS

1.0

μS

0.1

μS

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