BDW45 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BDW45 Datasheet PDF : 2 Pages
| |||
J
, One.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW45
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCECKSUSP -60V(Min)
• High DC Current Gain
: hFE= 1000(Min)@lc=-5A
• Low Collector Saturation Voltage
: VCE(sat)= -2.0V(Max.)@ lc= -5.0A
= -3.0V(Max.)@lc=-10A
• Complement to Type BDW40
APPLICATIONS
• Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
-0.5
A
85
W
150
r
Tstg
Storage Temperature Range
-55-1 50 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
1.47 °c/w
1 .*>
T2
TVP
Ir 1.
1 23
f
t |St J—
-3
PI N 1 BASE
2.COLLECTOR
3. EMITTER
TO-220C package
r rtr;7i
kin i..
^
s
A
1
1
r. : ' MM**.
4H
I y~
K
soi-.. _^s/°°
i
V*
H et K
1_
c
f
mm
DIM MIN
A 15.70
B 9.90
C 4.20
D 0.70
F 3.40
G 4.98
H 2.70
J 0.44
K 13.20
L 1.10
Q 2.70
R 2.50
S 1.29
U 6.45
V 8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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