BDW45 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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BDW45

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

BDW45

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -30mA; IB=0

VcE(sat)-1 Collector-Emitter Saturation Voltage |c=-5A;lB=-10mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-10A; lB=-50mA

VsE(on) Base-Emitter On Voltage

lc= -1 OA ; VCE= -4V

-60

V

-2.0

V

-3.0

V

-3.0

V

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

-1.0 mA

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc=-5A;VcE=-4V

1000

hFE-2

DC Current Gain

lc=-10A;VGE=-4V

250

fr

Current-Gain—Bandwidth Product

lc= -3A; VCE= -3V; f,est= 1MHz

4

COB

Output Capacitance

lE=0;VcB=-10V;ftest=0.1MHz

-2.0 mA

-2.0 mA

MHz

300

pF

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