BDT64BF Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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Fabricante
BDT64BF Datasheet PDF : 2 Pages
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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDT64F/AF/BF/CF
DESCRIPTION
• Collector Current -lc= -12A
• High DC Current Gain-hFE= 1000(Min)@ lc= -5A
• Complement to Type BDT65F/AF/BF/CF
APPLICATIONS
• Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDT64F
-60
VCER
Collector-Emitter
Voltage
BDT64AF
-80
V
BDT64BF -100
BDT64CF -120
BDT64F
-60
VCEO
Collector-Emitter
Voltage
BDT64AF
-80
V
BDT64BF
-100
BDT64CF -120
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-12
A
ICIM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
39
W
150
r
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.7 'CM/
f
1 23
V2
L• i ' \fff —I—-
PIN 1.B/«E
2.CC LLECTOR
3.a(IITTER
TO-220Fa package
^B^-^s^
^r; . : ;
A . . '' . . ' ".:
.
'/.
V- "'
IV. It "T"
H . ..:
* .. . ..
K
*^ ^~L
tj —D
mm
DIM WIN
A 16.85
B 9.90
C 4.35
D 0.75
F 3.20
G 6.90
H 5.15
J 0.45
K 13^5
L 1.10
N 4.99
Q 4.35
R 2.95
5 2.70
IF 1.75
V 1.30
MAX
17.15
10.10
4.65
030
3.40
7.10
5.45
0.75
13.6S
1.30
5.18
5.15
3.25
2.90
2.05
1.50
N.I Soiiii-C'inuliictors reserves the right to change tost conditions, parameter limits and package dimensions uithout
notice. Information liirni.slied by N.I Semi-Conductors is helioxcd to he hoih nceiirate and reliahle at (lie time of i.'.uin
s. | | o \ \ c \ e r , M Semi-Coiidnelors nssiimes no rcspon-.ihilil> I'or an> errors or omissions discovered in its use.
i ( 1'inlin.luiN ciii/piitiii^-s ^n-.lumvi's to \i-ri!\l dala-.|icet'< are cmu-iil K-loiv pLitin,u orders.
Ounlihv S
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