BLF278 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BLF278 Datasheet PDF : 3 Pages
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VHP push-pull power MOS transistor
BLF278
CHARACTERISTICS
Ti = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
Per transistor section
V(BR)DSS
IDSS
IGSS
VoSth
AVGS
drain-source breakdown voltage VQS = O; ID = 100mA
drain-source leakage current VGS = 0; VDS = 50 V
gate-source leakage current
VGS = ±20 V; VDS = 0
gate-source threshold voltage VDS = 10V; ID = 50mA
gate-source voltage difference VDS = 10V; ID = 50mA
of both sections
125 -
-
-
-
-
2
-
—
—
9fs
9fsi/gfs2
RDSOP
bsx
cis
CQS
crs
Cd-f
forward transconductance
VDS = 10V;ID = 5A
4.5
6.2
forward transconductance ratio VDS = 10V;ID = 5 A
of both sections
0.9 —
drain-source on-state resistance VGs = 10V;lD = 5A
-
0.2
drain cut-off current
VGS = 10V; VDS = 10V
-
25
input capacitance
VGS = 0; VDS= 50 V; f = 1 MHz -
480
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz -
190
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz -
14
drain-flange capacitance
-
5.4
MAX. UNIT
-
V
2.5
mA
1
HA
4.5 V
100 mV
-
S
1.1
0.3 ii
-
A
-
PF
-
PF
-
PF
-
PF
VQS group indicator
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
GROUP
O
P
Q
R
S
T
U
V
W
X
Y
Z
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
LIMITS
(V)
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
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