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Fabricante

BU807FI

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

<^£.m.L-(Iondiictoi Lpioducti, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Darlington Power Transistor

BU807FI

DESCRIPTION

• High Voltage: VCBo= 330V(Min)

• Low Saturation Voltage-

:VCE(«t)=1.5V(Max)@lc=5A

APPLICATIONS

• Designed for use in horizontal deflection circuits in TV's

and CRT's.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

ip?

123

PIN 1.BASE

2.COLLECTOR

3-BullTTER

TO-220F package

, c-

-S-

VCBO

Collector-Base Voltage

VCEV

Collector-Emitter Voltage

330

V

L -—

330

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

Ic

Collector Current-Continuous

8

A

I CM

Collector Current-Peak

15

A

IB

Base Current

Collector Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

2

A

30

W

150

r

Tstg

Storage Temperature Range

-55-150

"C

0

N

mm

DIM MIN

A 14.95

B 10.00

C 4.40

D 0.75

F 3.10

H 3.70

J 0.50

K 13.4

L 1.10

N 5.00

Q 2.70

R 2.20

$ 2.65

U 6.40

MAX

15.05

10.10

4.60

0.80

3.30

3.90

0.70

13.6

1.30

5.20

2.90

2.40

2.85

6.60

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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