BSS806NE Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSS806NE Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
101
14 Typ. gate charge
V GS=f(Q gate); I D=2.3 A pulsed
parameter: V DD
5
BSS806NE
4.5
4
3.5
100
25 °C
3
100 °C
2.5
125 °C
2
10-1
100
101
102
103
1.5
1
10 V
16 V
4V
0.5
tAV [µs]
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Qgate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
16 Gate charge waveforms
25
24
23
22
21
20
19
18
17
16
-60 -20
20
60 100 140 180
Tj [°C]
V GS
V gs(th)
Q g(th)
Q gs
Rev 2.01
page 7
Qg
Q sw
Q gd
Q gate
2014-01-16
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