FPN560 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

FPN560

NPN Low Saturation Transistor

Fairchild Semiconductor 

NPN Low Saturation Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO

BVCBO

Collector-Emitter Breakdown

Voltage

Collector-Base Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 100°C

VEB = 4.0 V, IC = 0

60

V

80

V

5.0

V

100

nA

10

µA

100

nA

ON CHARACTERISTICS*

hFE

VCE(sat)

VBE(sat)

DC Current Gain

IC = 100 mA, VCE = 2.0 V

70

IC = 500 mA, VCE = 2.0 V 560

100 300

560A 250 550

IC = 1.0 A, VCE = 2.0 V

80

IC = 2.0 A, VCE = 2.0 V

40

Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA

IC = 2.0 A, IB = 200 mA

560

560A

300

mV

350

mV

300

mV

Base-Emitter Saturation Voltage

IC = 1.0 A, IB = 100 mA

1.25

V

VBE(on)

Base-Emitter Saturation Voltage

IC = 1.0 A, VCE = 2.0 V

1.0

V

SMALL SIGNAL CHARACTERISTICS

Cobo

FT

Output Capacitance

Transition Frequency

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCB = 10 V, IE = 0, f = 1.0 MHz

IC = 100 mA, VCE = 5.0 V,

f = 100 MHz

30

pF

75

MHz

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