SMD Type
Switching Diodes
DAP222 (KAP222)
■ Features
● High speed
● Suitable for high packing density layout
● High reliability
1
3
2
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
3
0.5 +0.1
-0.1
0.3±0.05
Diodes
U nit: m m
0.15±0.05
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Average forward current
Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VRM
VR
IO
IFM
Pd
TJ
Tstg
Rating
80
80
100
300
150
150
-55 to 150
Unit
V
mA
mW
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF IF= 100mA
IR
VR= 70 V
Cj VR= 6 V, f= 1 MHz
trr
IF=IR=5mA , VR=6V
■ Marking
Marking
P
Min Typ Max Unit
80
V
1.2
0.1 uA
3.5 pF
4 ns
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