HYB39S256400T-10 Ver la hoja de datos (PDF) - Infineon Technologies

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HYB39S256400T-10

256 MBit Synchronous DRAM

Infineon Technologies 

HYB 39S256400/800/160T

256 MBit Synchronous DRAM

TSOPII-54 (10.16 mm × 22.22 mm, 0.8 mm pitch)

15˚±5˚

0.8

0.35

+0.1 3)

-0.05

15˚±5˚

26x 0.8 = 20.8

0.1 54x

0.2 M 54x

54

28

10.16±0.13 2)

0.5 ±0.1

11.76 ±0.2

1 2.5 max

27

22.22 ±0.13 1)

Index Marking

1) Does not include plastic or metal protrusion of 0.15 max per side

2) Does not include plastic protrusion of 0.25 max per side

3) Does not include dambar protrusion of 0.13 max per side

Pin Configuration for × 4, × 8 & × 16 organized 256 M-DRAMs

GPX09039

Semiconductor Group

3

1998-10-01

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