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DAP222M Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza
componentes Descripción
Fabricante
DAP222M
BILIN
Galaxy Semi-Conductor 
DAP222M Datasheet PDF : 3 Pages
1 2 3
Production specification
Surface Mount Fast Switching Diode
FEATURES
z Ultra-Small surface mount package.
z Fast switching speed.
z For general purpose switching
applications.
z Low conductance.
Pb
Lead-free
DAP222M
APPLICATIONS
z General purpose switching application.
ORDERING INFORMATION
Type No.
Marking
DAP222M
P
SOT-723
Package Code
SOT-723
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VR
DC reverse voltage
80
VRM
Peak reverse voltage
80
IF
Forward continuous voltage
100
IFM
Peak forward current (max.)
300
Non-repetitive peak forward surge current
IFSM
@t=1.0μs 2.0
Pd
RθJA
Tj,Tstg
Power dissipation
Thermal resistance junction to ambient
Junction and Storage Temperature
150
833
-55 to +150
Units
V
V
mA
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
IR=100μA
80
Leakage current
IR
VR=70V
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
CD
VR=6.0V,f=1MHz
3.5
Reverse recovery Time
trr
IF=IR=5.0mA,Irr=0.1*IR,RL=100
VR=6.0V
4.0
UNIT
V
μA
V
pF
ns
N010
Rev.A
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