MJD32C Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

MJD32C

Silicon PNP Power Transistors

Inchange Semiconductor 

isc Silicon PNP Power Transistors

INCHANGE Semiconductor

MJD32C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A

VBE(on) Base-Emitter On Voltage

IC= -3A; VCE= -4V

ICES

Collector Cutoff Current

VCE= -100V; VEB= 0

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

hFE-2

DC Current Gain

IC= -3A; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -10V

MIN MAX UNIT

-100

V

-1.2

V

-1.8

V

-20

uA

-50

uA

-1.0 mA

25

10

50

3

MHz

isc Website：www.iscsemi.com

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