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PHP23NQ11T Datasheet PDF : 13 Pages
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PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
-
-
110 V
-
-
23 A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
100 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 23 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
-
10 -
nC
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 13 A; Tj = 25 °C; -
on-state resistance see Figure 9 and 10
49 70 mΩ
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