2SB673 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB673

Silicon PNP Darlington PowerTransistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)GEO Collector-Emitter Breakdown Voltage lc= -50mA, IB= 0

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -3A,lB=-6mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-7A,lB=-14mA

VsE(sat) Base-Emitter Saturation Voltage

lc=-3A,lB= -6mA

ICBO

Collector Cutoff Current

VCB=-100V, IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -3A ; VCE= -3V

hpE-2

DC Current Gain

lc= -7A ; VCE= -3V

2SB673

MIN TYP. MAX UNIT

-100

V

-1.5

V

-2.0

V

-2.5

V

-100 u A

-4

mA

2000

15000

1000

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