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2SB691

Silicon PNP Power Transistor

New Jersey Semiconductor 

Iziizu <^£.mi-C.onau,ckoi I/ toaucti, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB691

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo= -SOV(Min)

• Good Linearity of hFE

• Wide Area of Safe Operation

• Complement to Type 2SD727

1 23

TQ-3PN Package

B—- *C •+-

APPLICATIONS

• Designed for low frequency power amplifier and power

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

\

fh

K

Q *—L

VCBO Collector-Base Voltage

-130

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

Collector Power Dissipation

PC

@ T0=25'C

Tj

Junction Temperature

-5

A

60

W

150

'C

Tstg

Storage Temperature Range

-55-150

'C

mm

DIM MIN MAX

A 19.60 20.30

B 15.50 15.70

C 4.70 4.90

D 0.90 1.10

E 1.90 2.10

I- 3.40 3.60

G 2.90 3.20

K 3.20 3.40

J 0.595 0.605

K 19.80 20.70

L 1.90 2.20

N 1089 1091

Q 4.90 5.10

R 3.35 3.45

s 1.995 2.100

5.90 6.20

Y 9.90 110.10

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. I lowever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.

Quality Semi-Conductors

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