2SB1373 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1373 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1373
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage ' lc= -8A; IB= -0.8A
VBE(on) Base -Emitter On Voltage
lc= -8A; VCE= -5V
ICBO
Collector Cutoff Current
V0B=-160V;IE=0
IEBO
Emitter Cutoff Current
VEB= -3V; lc= 0
hpE-1
DC Current Gain
lc= -20mA; VCE= -5V
hFE-2
DC Current Gain
lc= -1A; VCE= -5V
hFE-3
DC Current Gain
lc= -8A; VCE= -5V
fr
Current-Gain—Bandwidth Product lc= -0.5A; VCE= -5 V; f= 1MHz
COB
Output Capacitance
lE=0;VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8
V
-50 u A
-50 U A
1
20
60
200
20
15
MHz
400
PF
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
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