2SB1468 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SB1468

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1468

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -30V(Min)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A)

·Complement to Type 2SD2219

·Complement to Type 2SD2065

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for high-speed inverters,converters.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Pulse

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-20

A

2

W

25

150

℃

-55~150 ℃

isc website：www.iscsemi.com

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