B1343 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
B1343 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ducts., One..
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1343
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-100V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)
APPLICATIONS
• Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
V
Ic
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
t
Collector Power Dissipation
@Ta=25C
PC
Collector Power Dissipation
@TC-25'C
Tj
Junction Temperature
-10
A
2
W
40
150
"C
Tstg
Storage Temperature
-55-150 "C
•2
•rr^ , J1 L-' w
s if
•-• =M1 ;
P::»: 1 Base
2 Collector
3 Emitter
' ~' TO-220C package
" B -1
^Gry f -« V »l -'
4iQ
Uk
AT
*S
1
—1
!*
!-lfi L
K '|
D
,
II''^
H c- H
»
c1
r
j
»M- J
«• R - «
mm
ntM MIN MAX
A 15.50 15.90
B 9.90 10.20
l_. 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
K 2.68 2.90
j 0.44 0.60
K 13. 00 13.40
L 1.10 1.45
0 2.70 2.90
R 2.30 2.70
S 1.29 1,35
Ij <>.45 (>.65
V 8.66 8.86
N.I Semi-Conductors reserves the right tw change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of aoin
10 press. I kmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N I Semi-Conductors encourages customers to verily that datasheets are current before plnchm orders.
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