SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1477
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.3 A
VBEsat
Base-emitter saturation voltage
IC=-3A;IB=-0.3 A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
MIN TYP. MAX UNIT
-100
V
-100
V
-5
V
-1.5
V
-2.0
V
-10 µA
-10 µA
60
320
hFE classifications
D
E
F
60-120 100-200 160-320
2