SI3456DV(1998) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI3456DV Datasheet PDF : 4 Pages
| |||
Si3456DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
TJ = 25_C
0.04
ID = 5.1 A
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6
Single Pulse Power
25
0.4
ID = 250 mA
20
0.2
–0.0
15
–0.2
–0.4
10
–0.6
–0.8
–1.0
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
5
0
0.01
0.10
1.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
10.00
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1
10
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70659
S-56945—Rev. B, 23-Nov-98
Share Link: 