DE150-102N02A Ver la hoja de datos (PDF) - IXYS CORPORATION
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DE150-102N02A Datasheet PDF : 4 Pages
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DE150-102N02A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
ID25
= 1000 V
=
2A
Symbol Test Conditions
Maximum Ratings
RDS(on) = 7.8 Ω
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
1000 V
1000 V
±20 V
±30 V
2A
12 A
1.5 A
6 mJ
3 V/ns
>200 V/ns
PDC
= 200W
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
200 W
DRAIN
Tc = 25°C
Derate .7W/°C above 25°C
Tc = 25°C
105
W GATE
3.5 W
0.71 C/W
1.41 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
1000
V
VDS = VGS, ID = 4 ma
2.5
4.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
500 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
7.8 Ω
VDS = 15 V, ID = 0.5ID25, pulse test
0.8
2
S
-55
+175 °C
175
°C
-55
+175 °C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
1.6mm (0.063 in) from case for 10 s
300
°C
2
g
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